jb Capacitors Company Have One Day Vacation on 1st October

Dear Customer, Good day!

Our workers will have National holiday from Oct.1st~Oct.7th, but our sales team only have 2 days off (on Oct.1st and Oct.7th).

During National holiday, if you have any project needs our support, welcome to contact us asap, we’ll give you fast reply as usual.

Please kindly focus on our below most hot seller series:

JFB--Metallized Polyester Film capacitor
JFW--X2 Metallized Polypropylene Film capacitor
JFG--Axial Metallized Polyester/ Polypropylene Film capacitor
JRA--Radial Aluminum electrolytic capacitor 2000Hours at 85C
JRB--Radial Aluminum electrolytic capacitor 2000Hours at 105C
JNC--Snap in Aluminum electrolytic capacitor 2000Hours at 85C
JNE--Snap in Aluminum electrolytic capacitor 2000Hours at 105C
JCS--SMD Aluminum electrolytic capacitor 2000Hours at 85C
JCK--SMD Aluminum electrolytic capacitor 1000~2000Hours at 105C
JYA--Y1and Y2 Safety Standard Recognized Capacitor
JYC--High Voltage Ceramic Radial Type Disc Capacitor

Please check our products link:  http://www.jbcapacitors.com/products.html for more products information. Welcome your any inquiry! 

From jb Capacitors Company 
----Just your best choice

jb Flatband Energy Diagram Of A Metal-Oxide-Semiconductor (MOS)

The flatband diagram is by far the easiest energy band diagram. The term flatband refers to fact that the energy band diagram of the semiconductor is flat, which implies that no charge exists in the semiconductor. The flatband diagram of an aluminum-silicon dioxide-silicon MOS structure is shown in Figure 6.2.4. Note that a voltage, VFB, must be applied to obtain this flat band diagram. Indicated on the figure is also the work function of the aluminum gate, FM, the electron affinity of the oxide, coxide, and that of silicon, c, as well as the bandgap energy of silicon, Eg. The bandgap energy of the oxide is quoted in the literature to be between 8 and 9 electron volt. The reader should also realize that the oxide is an amorphous material and the use of semiconductor parameters for such material can justifiably be questioned.

The flatband voltage is obtained when the applied gate voltage equals the workfunction difference between the gate metal and the semiconductor. If there is a fixed charge in the oxide and/or at the oxide-silicon interface, the expression for the flatband voltage must be modified accordingly.
Learn more about jb capacitors company:http://www.jbcapacitors.com/

Figure: Flatband energy diagram of a metal-oxide-semiconductor (MOS) structure consisting of an aluminum metal, silicon dioxide and silicon.