2016-4-11 21:43:23
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jb capacitors company produce film capacitors since 1980, with more than 35 expierence, offer very good quality for various film capacitors.
Dipped MKT MKP film capacitors:
JFB- Metallized polyester film capacitors
JFE- Metallized polyester film capacitors--mini size
JFL- Metallized polypropylene film capacitors
JFP- High voltage metallized polypropylene film capacitors
Box type MKT film capacitors:
JFD- Box type metallized polyester film capacitors
JFJ- mini box metallized polyester film capacitor, stacked
JFM- Metallized polypropylene film capacitors
JFQ- High voltage metallized polypropylene film capacitor
Audio Capacitors:
JFX- Premium metallized polypropylene film capacitor, axial type
JSX- Superior metallized polypropylene film capacitors, Axial type
Motor capacitors:
JFS- Motor film capacitors, more than 28 different types, with CE and UL certifications
2011-1-26 16:38:23
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The flatband diagram is by far the easiest energy band diagram. The term flatband refers to fact that the energy band diagram of the semiconductor is flat, which implies that no charge exists in the semiconductor. The flatband diagram of an aluminum-silicon dioxide-silicon MOS structure is shown in Figure 6.2.4. Note that a voltage, VFB, must be applied to obtain this flat band diagram. Indicated on the figure is also the work function of the aluminum gate, FM, the electron affinity of the oxide, coxide, and that of silicon, c, as well as the bandgap energy of silicon, Eg. The bandgap energy of the oxide is quoted in the literature to be between 8 and 9 electron volt. The reader should also realize that the oxide is an amorphous material and the use of semiconductor parameters for such material can justifiably be questioned.
The flatband voltage is obtained when the applied gate voltage equals the workfunction difference between the gate metal and the semiconductor. If there is a fixed charge in the oxide and/or at the oxide-silicon interface, the expression for the flatband voltage must be modified accordingly.
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Figure: Flatband energy diagram of a metal-oxide-semiconductor (MOS) structure consisting of an aluminum metal, silicon dioxide and silicon.