jbcapacitors blog

Along with the high integration of semiconductor devices, the miniaturization of their components has also advanced. For a dynamic random access memory (DRAM), a high-capacity capacitor with small size is required. Ferroelectric thin film capacitors with extremely large relative permittivity have been developed for this purpose. In film capacitors, the dielectric in such film capacitors comprises a plastic film. The electrodes comprise conductive metal areas. These metal areas are either thin conductor films or conductor layers vapor-deposited onto the plastic film. Thin-film capacitor devices generally comprise a substrate and a lower electrode, a dielectric layer, and an upper layer which are deposited on the substrate in that order. Thin-film capacitors also have a semiconductor substrate functioning as a lower electrode and have a dielectric layer and an upper layer which are deposited on the semiconductor substrate in that order in some cases.